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| SIDE LOOK PACKAGE PIN PHOTODIODE Description The MID-85H1C is a photodiode mounted in special dark plastic package and suitable for the IRED (850nm/880nm) Type. 6.60 (.260) 4.00 (.160) 5.00 (.200) MID-85H1C Package Dimensions Unit: mm ( inches ) 4.00 (.160) 22.60 TYP. (.890) 16.00 MIN. (.630) RADIANT SENSITIVE AREA Features l l l l l High photo sensitivity Low junction capacitance High cut -off frequency Fast switching time Suitable for the IRED 850nm/880nm type A 1.00MIN. (.040) 2.54 (.100) 0.50 TYP. (.020) C Notes : 1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.0 mm (.040") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o Unit mW Unity Opto Technology Co., Ltd. 02/04/2002 MID-85H1C Optical-Electrical Characteristics @ TA=25oC Parameter Reverse Break Down Voltage Test Conditions IR=0.1mA Ee=0 Reverse Dark Current VR=10V Ee=0 Open Circuit Voltage =850nm Ee=0.1mW/cm Rise Time Fall Time Light Current 2 Symbol V(BR)R ID VOC Tr Tf IL CT Min. 30 Typ. Max. Unit V 30 nA 350 mV VR =10V =850nm RL=50 VR =5V, =850nm Ee=0.1mW/cm 2 50 50 9 nsec A pF Total Capacitance VR =3V, f=1MHz Ee=0 25 Typical Optical-Electrical Characteristic Curves 4000 100 Dark Current IR - pA Capacitance C - pF 3000 80 60 40 20 0 2000 1000 0 0 5 10 15 20 0.01 0.1 1 10 100 Reverse Volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TEMP=25oC, Ee=0 mW/cm2 Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE F=1MHz ; Ee=0mW/cm2 Total Power Dissipation mW 200 150 1000 Dark Current IR - nA 0 20 40 60 80 100 100 100 50 0 10 1 0.1 0 20 40 60 80 100 Ambient Temperature -oC FIG.3 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE Ambient Temperature - oC FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE VR=10V, Ee=0 mw/cm2 Unity Opto Technology Co., Ltd. 02/04/2002 MID-85H1C Typical Optical-Electrical Characteristic Curves Relative Spectral Sensitivity 100 80 60 1000 Ip - A Photocurrnet 100 10 40 20 0 700 800 900 1000 1100 1200 1 0.1 0.01 0.1 1 10 Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH Irradiance Ee (mW/cm2) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 850 nm 0 10 20 30 40 1.0 0.9 0.8 50 60 70 80 90 0.5 0.3 0.1 0.2 0.4 0.6 Relative Sensitivity FIG.7 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002 |
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